IRS21094SPBF Datasheet | International Rectifier

Features HALF-BRIDGE DRIVER Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime 600 V max. 120 m A / 250 m A 10 V - 20 V 750 ns & 200 ns 540 ns - Floating channel designed for bootstrap operation - Fully operational to +600 V - Tolerant to negative transient voltage, d V/dt - Gate drive supply range from 10 V to 20 V - Undervoltage lockout for both channels - 3.3 V, 5 V, and 15 V input logic patible - Cross-conduction prevention logic - Matched propagation delay for both channels - High-side output in phase with IN input - Logic and power ground +/- 5 V offset. - Internal 540 ns deadtime, and programmable immune up to 5 µs with one external RDT resistor (IRS21094) - Lower di/dt gate driver for better noise immunity - Shutdown input turns off both channels. - Ro HS pliant (programmable up to 5 µs for IRS21094) Packages Description The IRS2109/IRS21094 are high voltage, high speed power MOSFET and IGBT drivers with dependent hig h- and low - side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highside configuration which operates up to 600 V. 8 Lead SOIC 14 Lead SOIC 14 Lead PDIP 8 Lead PDIP Typical Connection V CC up to 600 V V CC IN SD VB HO VS LO TO LOAD IN SD up to 600 V IRS21094 IRS2109 VCC IN SD VCC IN SD DT VB VS TO LOAD (Refer to Lead Assignments for correct configuration). These diagrams show electrical connections only. Please refer to our Application Notes and Design Tips for proper circuit board...